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Proceedings Paper

Image formation mechanism in PMMA-MAA antracene positive photoresist exposed by pulsed laser and kinetics of its development
Author(s): Alexei L. Bogdanov; V. A. Nikitaev; Andrey B. Poljakov; V. E. Tukish; Kamil A. Valiev; Leonid V. Velikov; D. Yu. Zaroslov
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Paper Abstract

A new resist composition based on PMMA-MAA copolymer with antracene additive was exposed by a single pulse of KrFexcimer laser (X =248 nm). Its contrast was found to exceed significantly the limit determined by light absorbtion. Studies of the development kinetics of the resist and corresponding theoretical reasoning justify the assumption of a thermal activated process (boiling of the residual dissolver).

Paper Details

Date Published: 1 June 1990
PDF: 7 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20138
Show Author Affiliations
Alexei L. Bogdanov, Physics and Technology Institu (Sweden)
V. A. Nikitaev, Physics and Technology Institute (Russia)
Andrey B. Poljakov, Physics and Technology Institu (Belarus)
V. E. Tukish, Physics and Technology Institu (Russia)
Kamil A. Valiev, Physics and Technology Institute (Russia)
Leonid V. Velikov, Physics and Technology Institute (United States)
D. Yu. Zaroslov, Physics and Technology Institute (Russia)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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