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Proceedings Paper

Development of a chemically amplified positive resist material for single-layer deep-UV lithography
Author(s): Omkaram Nalamasu; May Cheng; Janet M. Kometani; Sheila Vaidya; Elsa Reichmanis; Larry F. Thompson
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Paper Abstract

The chemistry and preliminary lithographic characteristics of chemically amplified positive acting (CAMP) resist formulations that meet the deep-UV lithography requirements of low optical density and high sensitivity were described recently.11 This paper examines the lithographic performance of a specific resist comprised of poly (t-butoxycarbonyloxystyrene-sulfur dioxide) and the onium salt, triphenylsulfonium hexafluoroarsenate as the photoacid generator. The lithographic performance was evaluated as a function of resin molecular properties, sensitizer loading effects and various process parameters. Exposures of optimum formulations of this resist (CAMP) were conducted on a GCA prototype deep-UV exposure tool with a NA = 0.35 and 5X reduction optics. Line/space patterns down to 0.35p.m with vertical wall profiles and 0.4.tm windows in 1-1.2im thick films were obtained. The paper will summarize the resolution, depth of focus, exposure latitude and processing characteristics obtained from the evaluation of CAMP and will discuss the pattern transfer results obtained with different substrates. The performance of CAMP was also evaluated on substrates with topography and the results will be presented.

Paper Details

Date Published: 1 June 1990
PDF: 17 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20136
Show Author Affiliations
Omkaram Nalamasu, AT&T Bell Labs. (United States)
May Cheng, AT&T Bell Labs. (United States)
Janet M. Kometani, AT&T Bell Labs. (United States)
Sheila Vaidya, AT&T Bell Labs. (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)
Larry F. Thompson, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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