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Proceedings Paper

Key points to measure accurately an ultra-low LER by using CD-SEM
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Paper Abstract

Metrology of line-edge roughness (LER) or line-width roughness (LWR) reduced less than a few nanometers in recent advanced-process is one of issues because measured LER is strongly dependent on measurement conditions such as magnification and beam dose. It may happen that different organizations measure different LERs on an identical sample. By using an ultra-low LER sample we demonstrate intolerable change of measured LER between with and without necessary key-points in the measurement conditions of critical-dimension secondary electron microscope (CD-SEM).

Paper Details

Date Published: 18 April 2013
PDF: 6 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86812N (18 April 2013); doi: 10.1117/12.2013494
Show Author Affiliations
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takahiro Kawasaki, Hitachi High-Technologies Corp. (Japan)
Toru Ikegami, Hitachi High-Technologies Corp. (Japan)
Norio Hasegawa, Hitachi High-Technologies Corp. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Hedetami Yaegashi, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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