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Proceedings Paper

Chemically amplified DUV photoresists using a new class of photoacid-generating compounds
Author(s): Georg Pawlowski; Ralph R. Dammel; Charlet R. Lindley; Hans-Joachim Merrem; Heinz Roeschert; Juergen Lingnau
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Paper Abstract

Photoresist materials based on chemical amplification processes show unique properties with respect to their sensitivity, flexibility in design and resolution capability which extends down to the sub half micron region as required for the production of ULSI devices of the next generations. Moreover, as such materials perfectly meet the requirements of DUV exposure tools, it is anticipated that they will be used for the production of 64 MB DRAMs. The photoacid generator (PAG) plays an important role in these complex systems. We report results using new nonionic PAG's, namely a,o'- bisarylsulfonyl diazomethanes j, which on DUV irradition generate sulfonic acids capable of cleaving acid labile dissolution inhibitors in positive tone DUV photoresists or crosslinking acid sensitive methylol compounds in negative tone materials. Their chemistry, photochemistry and relevant physical properties are discussed; first results on DUV sensitive three component photoresist materials using as PAG's are presented. The high sensitivities and contrasts observed in these materials are close to meeting the requirements of the semiconductor industry, which makes them viable candidates for further evaluation.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20133
Show Author Affiliations
Georg Pawlowski, Hoechst AG (United States)
Ralph R. Dammel, Hoechst AG (United States)
Charlet R. Lindley, Hoechst AG (Germany)
Hans-Joachim Merrem, Hoechst AG (United States)
Heinz Roeschert, Hoechst AG (Germany)
Juergen Lingnau, Hoechst AG (Germany)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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