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Proceedings Paper

The effects of deposition conditions and annealing temperature on the performance of gallium tin zinc oxide thin film transistors
Author(s): Tanina Bradley; Shanthi Iyer; Robert Alston; Ward Collis; Jay Lewis; Garry Cunningham; Eric Forsythe
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Paper Abstract

In this work the performance of bottom gate thin film transistors (TFTs) with transparent amorphous gallium tin zinc oxide (GSZO) active layers fabricated by radio frequency sputter deposition using a single GSZO target on SiO2/Si wafers will be presented. Trap density and its energetic distribution, and oxygen chemisorption were found to play a critical role in determining the operational characteristics of the device, all of which can be controlled by the oxygen incorporation and substrate temperature during deposition, along with the post-deposition annealing. In addition device instability, with respect to the electrical stress and optical illumination, can be suppressed by suitably tailoring these parameters. TFTs exhibiting a drain current (ID) of 10-6 A and on/off current ratio (Ion/off ) of 106 was achieved. A stable TFT has been achieved under electrical stress for 2% oxygen flow exhibiting ΔVT as low as ~0.5 V for 3hr stress under a gate bias of 1.2 and 12 V, with good optical stability.

Paper Details

Date Published: 18 March 2013
PDF: 10 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862615 (18 March 2013); doi: 10.1117/12.2013277
Show Author Affiliations
Tanina Bradley, North Carolina A&T State Univ. (United States)
Shanthi Iyer, North Carolina A&T State Univ. (United States)
Robert Alston, North Carolina A&T State Univ. (United States)
Ward Collis, North Carolina A&T State Univ. (United States)
Jay Lewis, Research Triangle Institute International (United States)
Garry Cunningham, Research Triangle Institute International (United States)
Eric Forsythe, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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