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Proceedings Paper

Experimental verification of EUV mask limitations at high numerical apertures
Author(s): Rikon Chao; Paul Graeupner; Eric Gullikson; Seong-Sue Kim; Jens-Timo Neumann; Ryan Miyakawa; Hwan-Seok Seo; Andy Neureuther; Patrick Naulleau
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Paper Abstract

In this work, we use a high accuracy synchrotron-based reflectometer to experimentally determine the effects of angular bandwidth limitations on high NA EUV performance. We characterized mask blank and mask pattern diffraction performance as a function of illumination angle, scatter angle, and wavelength. A variety of pattern feature sizes ranging down to coded sizes of 11 nm (44 nm on the mask) are considered. A Rigorous Coupled-Wave Analysis (RCWA) model is calibrated against the experimental data to enable future model-based performance predictions. The model is optimized against the clearfield data and verified by predicting the mask pattern diffraction data. We thus have confirmed the degradation and asymmetry of diffraction orders at high AOI.

Paper Details

Date Published: 1 April 2013
PDF: 8 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791M (1 April 2013); doi: 10.1117/12.2013209
Show Author Affiliations
Rikon Chao, Lawrence Berkeley National Lab. (United States)
Univ. of California, Berkeley (United States)
Paul Graeupner, Carl Zeiss SMT GmbH (Germany)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jens-Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Hwan-Seok Seo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Andy Neureuther, Univ. of California, Berkeley (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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