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Proceedings Paper

Submicron imaging at 248.3 nm: a lithographic performance review of an advanced negative resist
Author(s): John S. Petersen; Wei Lee
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Paper Abstract

This paper reviews the initial lithographic performance of the Megaposit® SNR 248-1.0 Photo Resist during the imaging of 0.35, 0.40, 0.45, 0.50 and 0.55km line/space pairs on a 0.42NA/0.5 coherence/KrF stepper. The test results show that process window overlap can be maintained to a normalized geometry size of 0.59 ki for line/space pairs. This degree of overlap is shown to be comparable to a normalized value of 0.76 k 1 during the simultaneous imaging of line/space pairs, isolated lines and isolated spaces. This result appears to be consistent with the g-line results published prcviously1 . It is also shown that at the exposure dose required to size the target geometry, the resist induced bias due to lateral development is negligible and provides the possibility to extend the working resolution to smaller geometries if the intensity minimum of the aerial image can be suppressed.

Paper Details

Date Published: 1 June 1990
PDF: 10 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20127
Show Author Affiliations
John S. Petersen, SEMATECH (United States)
Wei Lee, Nikon Precision, Inc. (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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