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Proceedings Paper

Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications
Author(s): O. Durand; C. Robert; T. Nguyen Thanh; S. Almosni; T. Quinci; J. Kuyyalil; C. Cornet; A. Létoublon; C. Levallois; J.-M. Jancu; J. Even; L. Pédesseau; M. Perrin; N. Bertru; A. Sakri; N. Boudet; A. Ponchet; P. Rale; L. Lombez; J.-F. Guillemoles; X. Marie; A. Balocchi; P. Turban; S. Tricot; Mircea Modreanu; S. Loualiche; A. Le Corre
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Paper Abstract

Lattice-matched GaP-based nanostructures grown on silicon substrates is a highly rewarded route for coherent integration of photonics and high-efficiency photovoltaic devices onto silicon substrates. We report on the structural and optical properties of selected MBE-grown nanostructures on both GaP substrates and GaP/Si pseudo-substrates. As a first stumbling block, the GaP/Si interface growth has been optimised thanks to a complementary set of thorough structural analyses. Photoluminescence and time-resolved photoluminescence studies of self-assembled (In,Ga)As quantum dots grown on GaP substrate demonstrate a proximity of two different types of optical transitions interpreted as a competition between conduction band states in X and Γ valleys. Structural properties and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown on GaP substrates and GaP/Si pseudo substrates are reported. Our results are found to be suitable for light emission applications in the datacom segment. Then, possible routes are drawn for larger wavelengths applications, in order to address the chip-to-chip and within-a-chip optical interconnects and the optical telecom segments. Finally, results on GaAsPN/GaP heterostructures and diodes, suitable for PV applications are reported.

Paper Details

Date Published: 4 February 2013
PDF: 17 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863126 (4 February 2013); doi: 10.1117/12.2012670
Show Author Affiliations
O. Durand, Univ. Européenne de Bretagne (France)
C. Robert, Univ. Européenne de Bretagne (France)
T. Nguyen Thanh, Univ. Européenne de Bretagne (France)
S. Almosni, Univ. Européenne de Bretagne (France)
T. Quinci, Univ. Européenne de Bretagne (France)
INES–CEA (France)
J. Kuyyalil, Univ. Européenne de Bretagne (France)
C. Cornet, Univ. Européenne de Bretagne (France)
A. Létoublon, Univ. Européenne de Bretagne (France)
C. Levallois, Univ. Européenne de Bretagne (France)
J.-M. Jancu, Univ. Européenne de Bretagne (France)
J. Even, Univ. Européenne de Bretagne (France)
L. Pédesseau, Univ. Européenne de Bretagne (France)
M. Perrin, Univ. Européenne de Bretagne (France)
N. Bertru, Univ. Européenne de Bretagne (France)
A. Sakri, Univ. Européenne de Bretagne (France)
N. Boudet, CRG-D2AM, ESRF & Inst. Néel, CNRS-UJF (France)
A. Ponchet, CEMES-CNRS, Univ. de Toulouse (France)
P. Rale, IRDEP, CNRS (France)
L. Lombez, IRDEP, CNRS (France)
J.-F. Guillemoles, IRDEP, CNRS (France)
X. Marie, Univ. de Toulouse, INSA, CNRS, UPS (France)
A. Balocchi, Univ. de Toulouse, INSA, CNRS, UPS (France)
P. Turban, Institut de Physique de Rennes, CNRS, Univ. de Rennes 1 (France)
S. Tricot, Institut de Physique de Rennes, CNRS, Univ. de Rennes 1 (France)
Mircea Modreanu, Univ. College Cork (Ireland)
S. Loualiche, Univ. Européenne de Bretagne (France)
A. Le Corre, Univ. Européenne de Bretagne (France)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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