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Proceedings Paper

Evaluation of resist materials for KrF excimer laser lithography
Author(s): Harry H. Fujimoto; Masaru Sasago; Yoshiyuki Tani; Masayuki Endo; Noboru Nomura
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Paper Abstract

Good resist patterns are not obtained for KrF excimer laser lithography using conventional naphtoquinonediazide novalac resin deep UV resist because of the strong photoabsorption of the resist at 248nm wavelength. In this paper we report the development of new high transparency positive resists, STAR-P and MASTER, using poly(styrene-co-maleic acid half ester) base polymer and sensitizers. These resists have excellent transmittance as high as 70% and photobleaching characteristics resulting in resolution of 0.45 micron with excellent pattern profiles with greater than 80 degree wall angle. These resists also have excellent dry etch resistance comparable to conventional novolac resist during silicon dioxide etch. These resists are good candidates for development and manufacturing of sub-half micron VLSI devices.

Paper Details

Date Published: 1 June 1990
PDF: 13 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20126
Show Author Affiliations
Harry H. Fujimoto, Intel Corp. (United States)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)
Yoshiyuki Tani, Matsushita Electric Industrial Co., Ltd. (Japan)
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Noboru Nomura, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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