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Proceedings Paper

Room temperature GaN-based spin polarized emitters
Author(s): A. G. Melton; B. Kucukgok; Zhiqiang Liu; N. Dietz; N. Lu; I. T. Ferguson
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Paper Abstract

Wide band gap dilute magnetic semiconductors have recently been of interest due to theoretical predictions of room temperature ferromagnetism in these materials. In this work Ga1-xGdxN thin films were grown by Metalorganic Chemical Vapor Deposition. These films were found to be ferromagnetic at room temperature and electrically conducting. However, only GaN:Gd layers and devices grown with a TMHD3Gd precursor that contained oxygen showed strong ferromagnetism, while materials grown with an oxygen-free Cp3Gd precursor did not show ferromagnetic behavior. This experimental observation was consistent with first-principles calculations based on density functional theory calculations that we completed that showed the ferromagnetism was mediated by interstitial oxygen. The results confirmed the first successful realization of Ga1-xGdxN-based spin-polarized LED with 14.6% degree of polarization at 5000 Gauss is obtained.

Paper Details

Date Published: 4 February 2013
PDF: 9 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863104 (4 February 2013); doi: 10.1117/12.2012586
Show Author Affiliations
A. G. Melton, The Univ. of North Carolina at Charlotte (United States)
B. Kucukgok, The Univ. of North Carolina at Charlotte (United States)
Zhiqiang Liu, The Univ. of North Carolina at Charlotte (United States)
R&D Ctr. for Semiconductor Lighting (China)
N. Dietz, Georgia State Univ. (United States)
N. Lu, The Univ. of North Carolina at Charlotte (United States)
I. T. Ferguson, The Univ. of North Carolina at Charlotte (United States)
Georgia State Univ. (United States)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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