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Proceedings Paper

EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools
Author(s): Donald W. Johnson; Eitan Shalom; Glenn R. Dickey; Kelly Hale; Terry Pebbles
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Paper Abstract

The accelerated drive toward 0.5 and 0.3 urn optical imaging is putting severe pressure on both the equipment and photoresist vendors. Materials must give both high resolution and high process latitude. These needs led to the develop- ment of EL2015 positive photoresist series. This is a high contrast, high resolution photoresist series based on the same chemical concepts used in our PR1O24MB resists. This new resist contains a 2,1,5-naphthoquirionediazidesulfonate ester of a special novolac as its photoactive component. This is combined with an improved novolac resin for better film integrity. EL2015 is a versatile positive resist optimized for g-, h-, i-line, and broadband exposure tools. Resolution of better than 0.50 urn has been routinely obtained with current 0.40 NA i-line steppers and 0.40 urn resolution at best focus. A focus latitude of greater than 1.5 urn for 0.5 urn images with an exposure latitude of 30-50% has been demonstrated on i-line equipment. Finally, the thermal stability and plasma etch resistance of EL2015 has been found to be comparable to current high resolution g-line photoresists.

Paper Details

Date Published: 1 June 1990
PDF: 11 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20125
Show Author Affiliations
Donald W. Johnson, MacDermid Inc. (United States)
Eitan Shalom, MacDermid Inc. (Israel)
Glenn R. Dickey, MacDermid Inc. (United States)
Kelly Hale, MacDermid Inc. (United States)
Terry Pebbles, MacDermid Inc. (United States)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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