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Proceedings Paper

Gaps analysis for CD metrology beyond the 22nm node
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Paper Abstract

This paper will examine the future for critical dimension (CD) metrology. First, we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM, sometimes elsewhere referred to as HIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high-voltage scanning electron microscopy (HV-SEM), and other types. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.

Paper Details

Date Published: 10 April 2013
PDF: 29 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813B (10 April 2013); doi: 10.1117/12.2012472
Show Author Affiliations
Benjamin Bunday, SEMATECH (United States)
Thomas A. Germer, National Institute of Standards and Technology (United States)
Victor Vartanian, SEMATECH (United States)
Aaron Cordes, SEMATECH (United States)
Aron Cepler, SEMATECH (United States)
Univ. at Albany (United States)
Charles Settens, Univ. at Albany (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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