Share Email Print
cover

Proceedings Paper

Enhancing 9 nm node dense patterned defect optical inspection using polarization, angle, and focus
Author(s): Bryan M. Barnes; Francois Goasmat; Martin Y. Sohn; Hui Zhou; Richard M. Silver; Abraham Arceo
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-sized defects through best focus. These images, which are xy planes, collected using polarized illumination are stacked according to focus position, z, and through interpolation, volumetric pixels (“voxels”) are formed sized approximately 40 nm per side. From the image data, an intensity can be assigned to each (x,y,z) position. These four-dimensional matrices are extensively filtered for defect detection using multi-dimensional intensity thresholding, nearest-neighbor criteria, continuity requirements, and other techniques standard to optical defect inspection. A simulation example with oblique angles of illumination is presented. Experimental results are shown from the NIST λ=193 nm Microscope using full-field illumination. Volumetric data analysis is compared against the processing of single 2-D images. Defect metrics for comparing planar and volumetric data are developed with the potential shown for a five-fold increase in defect sensitivity using volumetric data versus conventional imaging.

Paper Details

Date Published: 10 April 2013
PDF: 8 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810E (10 April 2013); doi: 10.1117/12.2012250
Show Author Affiliations
Bryan M. Barnes, National Institute of Standards and Technology (United States)
Francois Goasmat, National Institute of Standards and Technology (United States)
Martin Y. Sohn, National Institute of Standards and Technology (United States)
Hui Zhou, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)
Abraham Arceo, SEMATECH (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

© SPIE. Terms of Use
Back to Top