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Proceedings Paper

Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique
Author(s): V. Jindal; A. John; J. Harris-Jones; P. Kearney; A. Antohe; E. Stinzianni; F. Goodwin; T. Onoue
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Paper Abstract

EUVL requires a high yield of low-defect density reflective mask blanks, one of the top two critical technology gaps for the commercialization of this technology. One of the major sources of mask blank defects is the top of the substrate due to substrate quality, cleaning residue, and handling- or storage-induced defects. SEMATECH’s current inspection tool, the Lasertec 7360, can detect defects down to 37 nm on quartz substrates in dense scan mode. Defects below 40 nm on these substrate are difficult to detect, which challenges the quantification and characterization, and hence the determination of defect sources. SEMATECH developed a thin film decoration technique to quantify sub-40 nm defects and analyze composition to pinpoint defect sources. The technique involves oblique angle deposition in an ion beam deposition system, which decorates the particle. The decoration of particles is optimized by depositing enough thin film so that defects can be detected by the Lasertec7360 and yet keeping the film thin enough to employ several metrology techniques to efficiently analyze defect composition. The challenges involved with the metrology of such embedded defects and the impact of oblique angle deposition will be discussed. A theoretical model of defect decoration that can successfully simulate the thin film deposition on top of the defects will be provided. The effect of angle, deposition rate, and deposition time to quantify the decoration effect will also be presented.

Paper Details

Date Published: 1 April 2013
PDF: 10 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791O (1 April 2013); doi: 10.1117/12.2012173
Show Author Affiliations
V. Jindal, SEMATECH Inc. (United States)
A. John, SEMATECH Inc. (United States)
J. Harris-Jones, SEMATECH Inc. (United States)
P. Kearney, SEMATECH Inc. (United States)
A. Antohe, SEMATECH Inc. (United States)
E. Stinzianni, SEMATECH Inc. (United States)
F. Goodwin, SEMATECH Inc. (United States)
T. Onoue, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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