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Proceedings Paper

Challenges in EUV mask blank deposition for high volume manufacturing
Author(s): V. Jindal; P. Kearney; A. Antohe; M. Godwin; A. John; R. Teki; J. Harris-Jones; E. Stinzianni; Frank Goodwin
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Paper Abstract

EUVL requires high-yield, low defect density reflective mask blanks, a requirement which is considered one of the top two critical technology gaps for commercialization of the technology. At the SEMATECH Mask Blank Development Center (MBDC), research on defect reduction and yield improvement for EUV mask blanks is being pursued using the Veeco Nexus deposition tool. The defect performance of this tool is one of the factors limiting the availability of defect-free EUVL mask blanks. SEMATECH identified the key components in the ion beam deposition system that are currently impeding the reduction of defect density and the yield of EUV mask blanks. SEMATECH improved the defect performance of the champion blank with 12 defects above 45 nm which is a 36% improvement from the data reported last year for the champion blank (19 defects above 45 nm). The yield analysis on high quality mask blanks from ion beam deposition system is also presented. Substrate quality is currently the biggest source of mask blank defects, while high yield also requires complete elimination of large size defects from deposition. A roadmap to meet the required defectivity specification for EUV mask blanks is presented.

Paper Details

Date Published: 1 April 2013
PDF: 8 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791D (1 April 2013); doi: 10.1117/12.2012169
Show Author Affiliations
V. Jindal, SEMATECH Inc. (United States)
P. Kearney, SEMATECH Inc. (United States)
A. Antohe, SEMATECH Inc. (United States)
M. Godwin, SEMATECH Inc. (United States)
A. John, SEMATECH Inc. (United States)
R. Teki, SEMATECH Inc. (United States)
J. Harris-Jones, SEMATECH Inc. (United States)
E. Stinzianni, SEMATECH Inc. (United States)
Frank Goodwin, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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