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Proceedings Paper

Scatterometry evaluation of focus-dose effects of EUV structures
Author(s): Prasad Dasari; Oleg Kritsun; Jie Li; Catherine Volkman; Jiangtao Hu; Zhuan Liu
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Paper Abstract

CD and shape control of extreme ultraviolet lithography (EUVL) structures is critical to ensure patterning performance at the 10 nm technology node and beyond. The optimum focus/dose control by EUV scanner is critical for CD uniformity, and the scanner depends on reliable and rapid metrology feedback to maintain control. The latest advances in scatterometry such as ellipsometry (SE), reflectometry (NISR), and Mueller matrix (MM) offers complete pattern profile, critical dimensions (CD), side-wall angles, and dimensional characterization. In this study, we will present the evaluation results of CD uniformity and focus dose sensitivity of line and space EUV structures at the limit of current ASML NXE 3100 scanner printability and complex 3D EUV structures. The results will include static and dynamic precision and CD-SEM correlation data.

Paper Details

Date Published: 10 April 2013
PDF: 15 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810T (10 April 2013); doi: 10.1117/12.2012120
Show Author Affiliations
Prasad Dasari, Nanometrics Inc. (United States)
Oleg Kritsun, GLOBALFOUNDRIES (United States)
Jie Li, Nanometrics Inc. (United States)
Catherine Volkman, GLOBALFOUNDRIES (United States)
Jiangtao Hu, Nanometrics Inc. (United States)
Zhuan Liu, Nanometrics Inc. (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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