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Proceedings Paper

The effect of mask and source complexity on source mask optimization
Author(s): Seung-Hune Yang; Ningning Jia; SeongBo Shim; Dmitry Vengertsev; Jungdal Choi; Ho-Kyu Kang; Young-Chang Kim
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Paper Abstract

More complex source and mask shapes are required to maximize the process window in low κ1 era. In simulation, the improvement can be shown well with ideal source and mask shapes. However imperfection of the source and mask can cause critical dimension (CD) errors and results in smaller process margin than expected one. In this paper, it is shown that how process margins can be improved with different source and mask complexities. Also the effect of source and mask complexities on CD errors and process margin degradation is discussed. The error source of the electron beam mask pattern generator is investigated and used for mask CD uniformity estimation with different mask complexity.

Paper Details

Date Published: 12 April 2013
PDF: 9 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86830C (12 April 2013); doi: 10.1117/12.2011993
Show Author Affiliations
Seung-Hune Yang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Ningning Jia, Samsung Electronics Co., Ltd. (Korea, Republic of)
SeongBo Shim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Dmitry Vengertsev, Samsung Electronics Co., Ltd. (Korea, Republic of)
Jungdal Choi, Samsung Electronics Co., Ltd. (Korea, Republic of)
Ho-Kyu Kang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Young-Chang Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

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