Share Email Print

Proceedings Paper

Extendibility of self-aligned type multiple patterning for further scaling
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photolithography has been a driving force behind semiconductor scaling, but the technology has been at a standstill since the development of 193-nm water-based immersion lithography. As a consequence, the double patterning process has become the standard technology for diverse types of semiconductor devices as a means of extending the life of 193-nm exposure technology. We have previously reported on the extendibility and versatility of the double patterning process, from pitch-doubling by self-aligned double patterning (SADP)[1] to pitch-quadrupling by self-aligned quadruple patterning (SAQP)[2]. We also reported on the effectiveness of SADP technology for increasing resolution in hole patterns. While waiting for the development of extreme ultraviolet (EUV) lithography tools to be completed, it will be necessary to search out possibilities for further semiconductor scaling using the double patterning process as the mainstream technique for extending the life of 193-nm immersion lithography.

Paper Details

Date Published: 29 March 2013
PDF: 7 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821D (29 March 2013); doi: 10.1117/12.2011953
Show Author Affiliations
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Masatoshi Yamato, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

© SPIE. Terms of Use
Back to Top