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Proceedings Paper

G-line image reversal: capabilities on a 0.54-N.A. stepper
Author(s): Thomas R. Seha; Thiloma Perera
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Paper Abstract

During the last several years image reversal has been demonstrated to be an effective technique for extending theresolution ofoptical steppers while maintaining therelative simplicity of single layerresist processing13. In order to satisfy the increasing requirements for smaller device geometries very high numerical aperture g-line steppers have lately become available. A new image reversal resist (Raypo) designed specifically for g-line use has recently been developed by Hoechst corporation4. This paper discusses the process optimization andlithographic performance ofthis resist on a 0.54 N.A. stepper, one ofthe highest numerical aperture g-line steppers currently available. The process variables investigated include prebake temperature, post exposure bake temperature, flood exposure time, and develop conditions. The responses studied include resolution capability, profile quality, dose requirements, exposure latitude, focus latitude, and performance on reflective topography. The thermal stability of the resist is also discussed. Some results are compared with those for a new advancedpositive g-line resist (AZ 6212) developed by Hoechst corporation.

Paper Details

Date Published: 1 June 1990
PDF: 12 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20118
Show Author Affiliations
Thomas R. Seha, Texas Instruments Inc. (United States)
Thiloma Perera, Hoechst Celanese Corp. (United States)


Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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