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Proceedings Paper

Commissioning an EUV mask microscope for lithography generations reaching 8 nm
Author(s): Kenneth A. Goldberg; Iacopo Mochi; Markus Benk; Arnaud P. Allezy; Michael R. Dickinson; Carl W. Cork; Daniel Zehm; James B. Macdougall; Erik Anderson; Farhad Salmassi; Weilun L. Chao; Vamsi K. Vytla; Eric M. Gullikson; Jason C. DePonte; M. S. Gideon Jones; Douglas Van Camp; Jeffrey F. Gamsby; William B. Ghiorso; Hanjing Huang; William Cork; Elizabeth Martin; Eric Van Every; Eric Acome; Veljko Milanovic; Rene Delano; Patrick P. Naulleau; Senajith B. Rekawa
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Paper Abstract

The SEMATECH High-NA Actinic Reticle review Project (SHARP) is a synchrotron-based, EUV-wavelength microscope, dedicated to photomask imaging, now being commissioned at Lawrence Berkeley National Laboratory. In terms of throughput, resolution, coherence control, stability and ease of use, SHARP represents a significant advance over its predecessor, the SEMATECH Berkeley Actinic Inspection Tool (AIT), which was decommissioned in September 2012. SHARP utilizes several advanced technologies to achieve its design goals: including the first Fouriersynthesis illuminator on a zoneplate microscope, EUV MEMS mirrors, and high-efficiency freestanding zoneplate lenses with numerical aperture values up to 0.625 (4×). In its first week of operation, SHARP demonstrated approximately 150 times higher light throughput than AIT and a spatial resolution down to 55-nm half-pitch with 0.42 4×NA (i.e. the smallest feature size on our test mask.) This paper describes the current status of the tool commissioning and the performance metrics available at this early stage.

Paper Details

Date Published: 1 April 2013
PDF: 10 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867919 (1 April 2013); doi: 10.1117/12.2011688
Show Author Affiliations
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Iacopo Mochi, Lawrence Berkeley National Lab. (United States)
Markus Benk, Lawrence Berkeley National Lab. (United States)
Arnaud P. Allezy, Lawrence Berkeley National Lab. (United States)
Michael R. Dickinson, Lawrence Berkeley National Lab. (United States)
Carl W. Cork, Lawrence Berkeley National Lab. (United States)
Daniel Zehm, Lawrence Berkeley National Lab. (United States)
James B. Macdougall, Lawrence Berkeley National Lab. (United States)
Erik Anderson, Lawrence Berkeley National Lab. (United States)
Farhad Salmassi, Lawrence Berkeley National Lab. (United States)
Weilun L. Chao, Lawrence Berkeley National Lab. (United States)
Vamsi K. Vytla, Lawrence Berkeley National Lab. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)
Jason C. DePonte, Lawrence Berkeley National Lab. (United States)
M. S. Gideon Jones, Lawrence Berkeley National Lab. (United States)
Douglas Van Camp, Lawrence Berkeley National Lab. (United States)
Jeffrey F. Gamsby, Lawrence Berkeley National Lab. (United States)
William B. Ghiorso, Lawrence Berkeley National Lab. (United States)
Hanjing Huang, Lawrence Berkeley National Lab. (United States)
William Cork, Lawrence Berkeley National Lab. (United States)
Elizabeth Martin, Lawrence Berkeley National Lab. (United States)
Eric Van Every, Advanced Design Consulting USA, Inc. (United States)
Eric Acome, Advanced Design Consulting USA, Inc. (United States)
Veljko Milanovic, Mirrorcle Technologies, Inc. (United States)
Rene Delano, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Senajith B. Rekawa, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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