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Proceedings Paper

Patterning challenges of EUV lithography for 1X-nm node DRAM and beyond
Author(s): Tae-Seung Eom; Hong-Ik Kim; Choon-Ky Kang; Yoon-Jung Ryu; Seung-Hyun Hwang; Ho-Hyuk Lee; Hee-Youl Lim; Jeong-Su Park; Noh-Jung Kwak; Sungki Park
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Paper Abstract

In this paper, we will discuss patterning challenges of EUV lithography to apply 1xnm node DRAM. EUV lithography is positioned on essential stage because development stage for DRAM is going down sub-20nm technology node. It is time to decide how to make sub-20nm node DRAM. It will be the simplest and cost effective way to make device with matured EUVL. But in spite of world-wide effort to develop EUV lithography, the maturity of EUV technology is still lower than conventional ArF immersion lithography. So, DRAM manufacturers are considering several candidates such as DSA, DPT and MPT simultaneously. In addition, DRAM manufacturers are considering new cell layout and new memory also. For this study, we investigate process window and shadow effect across exposure field of sub-20nm node DRAM cell. We also performed an overlay matching experiment between 0.25NA EUV scanner and 1.35NA ArF immersion scanner. In addition, we will compare EUV lithography with ArF immersion DPT or SPT in view of patterning performance. Finally, we will discuss some technical issues to applying EUV lithography such as flare, resist LER, EUV OPC and illumination condition using 0.25NA EUV scanner.

Paper Details

Date Published: 1 April 2013
PDF: 9 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791J (1 April 2013); doi: 10.1117/12.2011687
Show Author Affiliations
Tae-Seung Eom, Hynix Semiconductor Inc. (Korea, Republic of)
Hong-Ik Kim, Hynix Semiconductor Inc. (Korea, Republic of)
Choon-Ky Kang, Hynix Semiconductor Inc. (Korea, Republic of)
Yoon-Jung Ryu, Hynix Semiconductor Inc. (Korea, Republic of)
Seung-Hyun Hwang, Hynix Semiconductor Inc. (Korea, Republic of)
Ho-Hyuk Lee, Hynix Semiconductor Inc. (Korea, Republic of)
Hee-Youl Lim, Hynix Semiconductor Inc. (Korea, Republic of)
Jeong-Su Park, Hynix Semiconductor Inc. (Korea, Republic of)
Noh-Jung Kwak, Hynix Semiconductor Inc. (Korea, Republic of)
Sungki Park, Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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