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Proceedings Paper

Practical proof of CP element based design for 14nm node and beyond
Author(s): Takashi Maruyama; Hiroshi Takita; Rimon Ikeno; Morimi Osawa; Yoshinori Kojima; Shinji Sugatani; Hiromi Hoshino; Toshio Hino; Masaru Ito; Tetsuya Iizuka; Satoshi Komatsu; Makoto Ikeda; Kunihiro Asada
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Paper Abstract

To realize HVM (High Volume Manufacturing) with CP (Character Projection) based EBDW, the shot count reduction is the essential key. All device circuits should be composed with predefined character parts and we call this methodology “CP element based design”. In our previous work, we presented following three concepts [2]. 1) Memory: We reported the prospects of affordability for the CP-stencil resource. 2) Logic cell: We adopted a multi-cell clustering approach in the physical synthesis. 3) Random interconnect: We proposed an ultra-regular layout scheme using fixed size wiring tiles containing repeated tracks and cutting points at the tile edges. In this paper, we will report the experimental proofs in these methodologies. In full chip layout, CP stencil resource management is critical key. From the MCC-POC (Proof of Concept) result [1], we assumed total available CP stencil resource as 9000um2. We should manage to layout all circuit macros within this restriction. Especially the issues in assignment of CP-stencil resource for the memory macros are the most important as they consume considerable degree of resource because of the various line-ups such as 1RW-, 2RW-SRAMs, Resister Files and ROM which require several varieties of large size peripheral circuits. Furthermore the memory macros typically take large area of more than 40% of die area in the forefront logic LSI products so that the shot count increase impact is serious. To realize CP-stencil resource saving we had constructed automatic CP analyzing system. We developed two types of extraction mode of simple division by block and layout repeatability recognition. By properly controlling these models based upon each peripheral circuit characteristics, we could minimize the consumption of CP stencil resources. The estimation for 14nm technology node had been performed based on the analysis of practical memory compiler. The required resource for memory macro is proved to be affordable value which is 60% of full CP stencil resource and wafer level converted shot count is proved to be the level which meets 100WPH throughput. In logic cell design, circuit performance verification result after the cell clustering has been estimated. The cell clustering by the acknowledgment of physical distance proved to owe large penalty mainly in the wiring length. To reduce this design penalty, we proposed CP cell clustering by the acknowledgment of logical distance. For shot-count reduction of random interconnect area design, we proposed a more structural routing architecture which consists of the track exchange and the via position arrangement. Putting these design approaches together, we can design CP stencils to hit the target throughput within the area constraint. From the analysis for other macros such as analog, I/O, and DUMMY, it has proved that we don’t need special CP design approach than legacy pattern matching CP extraction. From all these experimental results we get good prospects to the reality of full CP element based layout.

Paper Details

Date Published: 26 March 2013
PDF: 14 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 868027 (26 March 2013); doi: 10.1117/12.2011678
Show Author Affiliations
Takashi Maruyama, e-Shuttle Inc. (Japan)
Hiroshi Takita, Fujitsu Semiconductor Ltd. (Japan)
Rimon Ikeno, Univ. of Tokyo (Japan)
Morimi Osawa, Fujitsu Semiconductor Ltd. (Japan)
Yoshinori Kojima, e-Shuttle Inc. (Japan)
Shinji Sugatani, e-Shuttle Inc. (Japan)
Hiromi Hoshino, Fujitsu Semiconductor Ltd. (Japan)
Toshio Hino, Fujitsu Semiconductor Ltd. (Japan)
Masaru Ito, Fujitsu Semiconductor Ltd. (Japan)
Tetsuya Iizuka, Univ. of Tokyo (Japan)
Satoshi Komatsu, Univ. of Tokyo (Japan)
Makoto Ikeda, Univ. of Tokyo (Japan)
Kunihiro Asada, Univ. of Tokyo (Japan)

Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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