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Proceedings Paper

High-speed atomic force microscopy for patterned defect review
Author(s): Jason Osborne; Shuiqing Hu; Haiming Wang; Yan Hu; Jian Shi; Sean Hand; Chanmin Su
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Paper Abstract

This paper reports recent progress in using Atomic Force Microscopy as a defect review tool for patterned wafers. The key developments in the AFM technology are substantial scan speed improvements and the ability to reach feature bottom-CDs in a narrow trench. The latter is accomplished by controlling the tip-sample interaction via the short-range interaction force. Narrow trenches with vertical side wall angles comparable to current FinFET dimensions were imaged using the AFM, where imaging speeds for this sample reached about 0.2 frames per second, providing quantified topographic data for key features of the trenches. The sub-10 nm resolution data of high speed AFM demonstrates the technology as a viable solution for defect review.

Paper Details

Date Published: 18 April 2013
PDF: 8 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813C (18 April 2013); doi: 10.1117/12.2011665
Show Author Affiliations
Jason Osborne, Bruker Nano Inc. (United States)
Shuiqing Hu, Bruker Nano Inc. (United States)
Haiming Wang, Bruker Nano Inc. (United States)
Yan Hu, Bruker Nano Inc. (United States)
Jian Shi, Bruker Nano Inc. (United States)
Sean Hand, Bruker Nano Inc. (United States)
Chanmin Su, Bruker Nano Inc. (United States)

Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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