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Proceedings Paper

Nanoscale modulus and surface chemistry characterization for collapse free resists
Author(s): Prashant K. Kulshreshtha; Ken Maruyama; Sara Kiani; Dominik Ziegler; James Blackwell; Deidre Olynick; Paul D. Ashby
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Paper Abstract

One of the key challenges to high resolution resist patterning is pattern collapse. Using a new scanning probe microscopy (SPM), Peak ForceTM tapping, we map nano-mechanical properties-- modulus, adhesion, and dissipation-- of the exposed/developed resist structures with sub-10 nm resolution. Properties are compared across a carbon based negative resist with and without cross-linking. The SPM technique reveals that cross-linking significantly enhances the mechanical properties to give a champion resolution of sub 20 nm half-pitch in a chemically amplified negative resist system. Beyond mechanical properties, surface morphology and redistribution kinetics were examined using complementary techniques and reveal additional benefits with cross-linking.

Paper Details

Date Published: 18 April 2013
PDF: 11 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810O (18 April 2013); doi: 10.1117/12.2011657
Show Author Affiliations
Prashant K. Kulshreshtha, Lawrence Berkeley National Lab. (United States)
Ken Maruyama, JSR Micro, Inc. (United States)
Sara Kiani, Lawrence Berkeley National Lab. (United States)
Dominik Ziegler, Lawrence Berkeley National Lab. (United States)
James Blackwell, Intel Corp. (United States)
Deidre Olynick, Lawrence Berkeley National Lab. (United States)
Paul D. Ashby, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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