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Proceedings Paper

Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
Author(s): Prashant K. Kulshreshtha; Ken Maruyama; Sara Kiani; Scott Dhuey; Pradeep Perera; James Blackwell; Deirdre Olynick; Paul D. Ashby
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Paper Abstract

Here, we report the highest recorded resolution for a negative-tone, carbon-based, chemically amplified (CA) resist of 20 nm half-pitch (HP) using both E-beam and EUV exposure systems. The new chemistry incorporates variable amounts of oxetane (0, 5, 10 and 20%) cross-linker into a base of Noria-MAd (methyl-admantane) molecular resist. Cross-linkable resists showed simultaneous improvements in surface energy, structural integrity, and swelling to ensure collapse free 20nm HP patterns and line-edge roughness (LER) down to 2.3 nm. EUV exposed Noria-Ox (5%) cross-linked resist patterns demonstrated 5 times improvement in Z-factor (for 24 nm HP) over Noria-MAd alone.

Paper Details

Date Published: 29 March 2013
PDF: 10 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820N (29 March 2013); doi: 10.1117/12.2011640
Show Author Affiliations
Prashant K. Kulshreshtha, Lawrence Berkeley National Lab. (United States)
Ken Maruyama, JSR Micro, Inc. (United States)
Sara Kiani, Lawrence Berkeley National Lab. (United States)
Scott Dhuey, Lawrence Berkeley National Lab. (United States)
Pradeep Perera, Lawrence Berkeley National Lab. (United States)
James Blackwell, Intel Corp. (United States)
Deirdre Olynick, Lawrence Berkeley National Lab. (United States)
Paul D. Ashby, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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