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Proceedings Paper

Model based hint for litho hotspot fixing beyond 20nm node
Author(s): Jae-Hyun Kang; Byung-Moo Kim; Naya Ha; Hung bok Choi ; Kee sup Kim ; Sarah Mohamed; Kareem Madkour; Wael ElManhawy; Evan Lee; Jean-Marie Brunet; Joe Kwan
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Paper Abstract

As technology nodes scale beyond 20nm node, design complexity increases and printability issues become more critical and hard for RET techniques to fix. It is now mandatory for designers to run lithography checks prior to tape out and acceptance by the foundry. As lithography compliance became a sign-off criterion, lithography hotspots are increasingly treated like DRC violations. In the case of lithography hotspot, layout edges that should be moved to fix the hotspot are not necessarily the edges directly touching it. As a result of that, providing the designer with a suggested layout movements to fix the lithography hotspot is becoming a necessity. Software solutions generating hints should be accurate and fast. In this paper we are presenting a methodology for providing hints to the designers to fix Litho-hotspots in the 20nm and beyond.

Paper Details

Date Published: 29 March 2013
PDF: 7 pages
Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 86840N (29 March 2013); doi: 10.1117/12.2011619
Show Author Affiliations
Jae-Hyun Kang, Samsung Electronics Co., Ltd. (Korea, Republic of)
Byung-Moo Kim, Samsung Electronics Co., Ltd. (Korea, Republic of)
Naya Ha, Samsung Electronics Co., Ltd. (Korea, Republic of)
Hung bok Choi , Samsung Electronics Co., Ltd. (Korea, Republic of)
Kee sup Kim , Samsung Electronics Co., Ltd. (Korea, Republic of)
Sarah Mohamed, Mentor Graphics Corp. (Egypt)
Kareem Madkour, Mentor Graphics Corp. (Egypt)
Wael ElManhawy, Mentor Graphics Corp. (United States)
Evan Lee, Mentor Graphics Corp. (Korea, Republic of)
Jean-Marie Brunet, Mentor Graphics Corp. (United States)
Joe Kwan, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 8684:
Design for Manufacturability through Design-Process Integration VII
Mark E. Mason; John L. Sturtevant, Editor(s)

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