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Proceedings Paper

Directed self-assembly process implementation in a 300mm pilot line environment
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Paper Abstract

The patterning capability of the directed self-assembly (DSA) of a 42nm-pitch block copolymer on an 84nm-pitch guiding pattern was investigated in a 300mm pilot line environment. The chemoepitaxy guiding pattern was created by the IBM Almaden approach using brush materials in combination with an optional chemical slimming of the resist lines. Critical dimension (CD) uniformity, line-edge/line-width roughness (LER/LWR), and lithographic process window (PW) of the DSA process were characterized. CD rectification and LWR reduction were observed. The chemical slimming process was found to be effective in reducing pattern collapse, hence, slightly improving the DSA PW under over-dose conditions. However, the overall PW was found to be smaller than without using the slimming, due to a new failure mode at under-dose region.

Paper Details

Date Published: 26 March 2013
PDF: 8 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 86801G (26 March 2013); doi: 10.1117/12.2011610
Show Author Affiliations
Chi-Chun Liu, IBM Albany NanoTech (United States)
I. Cristina Estrada-Raygoza, IBM Albany NanoTech (United States)
Jassem Abdallah, IBM Albany NanoTech (United States)
Steven Holmes, IBM Albany NanoTech (United States)
Yunpeng Yin, IBM Albany NanoTech (United States)
Anthony Schepis, IBM Albany NanoTech (United States)
Michael Cicoria, Tokyo Electron Technology Ctr., America, LLC (United States)
David Hetzer, Tokyo Electron Technology Ctr., America, LLC (United States)
Hsinyu Tsai, IBM T. J. Watson Research Ctr. (United States)
Michael Guillorn, IBM T. J. Watson Research Ctr. (United States)
Melia Tjio, IBM Almaden Research Ctr. (United States)
Joy Cheng, IBM Almaden Research Ctr. (United States)
Mark Somervell, Tokyo Electron America, Inc. (United States)
Matthew Colburn, IBM Albany NanoTech (United States)


Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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