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Proceedings Paper

Effect of leaving group design on EUV lithography performance
Author(s): Owendi Ongayi; Vipul Jain; Suzanne M. Coley; David Valeri; Amy Kwok; Dung Quach; Mike Wagner; Jim Cameron; Jim Thackeray
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Paper Abstract

In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of the newly designed leaving groups are evaluated on a standard methacrylate polymer bound photoacid generator (PBP) platform. With our low activation energy and hydrophobic leaving group PBP, we report good line and space and contact hole performance using the Albany eMET and LBNL BMET tool.

Paper Details

Date Published: 1 April 2013
PDF: 11 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867907 (1 April 2013); doi: 10.1117/12.2011600
Show Author Affiliations
Owendi Ongayi, Dow Electronic Materials (United States)
Vipul Jain, Dow Electronic Materials (United States)
Suzanne M. Coley, Dow Electronic Materials (United States)
David Valeri, Dow Electronic Materials (United States)
Amy Kwok, Dow Electronic Materials (United States)
Dung Quach, Dow Electronic Materials (United States)
Mike Wagner, Dow Electronic Materials (United States)
Jim Cameron, Dow Electronic Materials (United States)
Jim Thackeray, Dow Electronic Materials (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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