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Proceedings Paper

Reduction of lateral swelling and incoporation of DESIRE in MOS processing
Author(s): Anne-Marie Goethals; David N. Nichols; Maaike Op de Beeck; P. De Geyter; Ki-Ho Baik; Luc Van den Hove; Bruno Roland; Ria Lombaerts
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Paper Abstract

The DESIRE1,2 process is based on selective silylation and subsequent dry development. A problem with silylation of resists is the volume expansion3 of the resist image, which results in pattern deformation and displacement of small features near large structures, also referred to as proximity effect. This lateral swel1ing45 should be reduced before implementation of DESIRE in ULSI processes. The effect of processing conditions, exposure wavelength, polymer composition and type of silylating agent on this swelling phenomenon have been studied and several solutions for reducing the swelling are proposed. Both thermal and UV induced crosslinking have been found to be a major contributor for elimination of the swelling. During silylation the silylating agent diffuses into the resist and reacts with the hydroxyl groups of the polymer. Swelling was reduced by lowering the concentration of these hydroxyl groups and by making use of different silylating agents with a smaller ballast group on the Si. The DESIRE process was implemented in a 0.5 xm gatelength NMOS process, in order to examine its compatibility with MOS processing, especially dry etch characteristics. 0.5 jim transistors have been succesfully made.

Paper Details

Date Published: 1 June 1990
PDF: 13 pages
Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); doi: 10.1117/12.20116
Show Author Affiliations
Anne-Marie Goethals, IMEC vzw (Belgium)
David N. Nichols, IMEC vzw (Belgium)
Maaike Op de Beeck, IMEC vzw (Belgium)
P. De Geyter, IMEC vzw (Belgium)
Ki-Ho Baik, IMEC vzw (United States)
Luc Van den Hove, IMEC vzw (Belgium)
Bruno Roland, UCB Electronics (Belgium)
Ria Lombaerts, UCB Electronics (Belgium)

Published in SPIE Proceedings Vol. 1262:
Advances in Resist Technology and Processing VII
Michael P. C. Watts, Editor(s)

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