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Proceedings Paper

Resist process applications to improve EUV patterning
Author(s): Karen Petrillo; Kyoungyoung Cho; Alexander Friz; Cecilia Montgomery; Dominic Ashworth; Mark Neisser; Stefan Wurm; Takashi Saito; Lior Huli; Akiteru Ko; Andrew Metz
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Paper Abstract

Roughness control is a key technical issue in extreme ultraviolet (EUV) lithography. It applies to both line and space (L/S) and contact hole (C/H) structures. Recently, SEMATECH and Tokyo Electron Limited (TEL) developed several track-based techniques, including developer optimization, FIRM™ (Finishing up by Improved Rinse Material), and smoothing to reduce structural roughness. The combination of these techniques improved line width roughness (LWR) about 25% from the 2011 baseline of 32 nm L/S. C/H structures were also tested with the combination process. This paper describes our latest L/S and C/H roughness performance post-lithography and postetch. A feasibility study of negative tone develop (NTD) resists for EUV is also included.

Paper Details

Date Published: 1 April 2013
PDF: 12 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867911 (1 April 2013); doi: 10.1117/12.2011566
Show Author Affiliations
Karen Petrillo, SEMATECH Inc. (United States)
Kyoungyoung Cho, SEMATECH Inc. (United States)
Alexander Friz, SEMATECH Inc. (United States)
Cecilia Montgomery, SEMATECH Inc. (United States)
Dominic Ashworth, SEMATECH Inc. (United States)
Mark Neisser, SEMATECH Inc. (United States)
Stefan Wurm, SEMATECH Inc. (United States)
Takashi Saito, TEL Technology Ctr., America, LLC (United States)
Lior Huli, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
Andrew Metz, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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