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Proceedings Paper

Compact modeling of fin-width roughness induced FinFET device variability using the perturbation method
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Paper Abstract

A compact model is developed to study the fin-width roughness (FWR) induced device variability and its impacts on FinFET performance. The perturbation theory is applied to obtain the analytic solution to nonlinear Poisson’s equation by treating FWR as a small deviation/perturbation from the ideal (flat) fin boundary. High accuracy of this compact model is verified with TCAD simulations. Both model calculation and TCAD simulation results show that FWR variation significantly affects FinFET device behavior. The conventional short-channel model is inaccurate to describe the FWR effects. Several types of FWR functions are studied and important device parameters such as Vt.sat, Vt.lin, DIBL are extracted from TCAD simulations, all of which are found sensitive to FWR variation.

Paper Details

Date Published: 29 March 2013
PDF: 12 pages
Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 86840I (29 March 2013); doi: 10.1117/12.2011551
Show Author Affiliations
Qi Cheng, Peking Univ. Shenzhen Graduate School (China)
Weiling Kang, Peking Univ. Shenzhen Graduate School (China)
Yijian Chen, Peking Univ. Shenzhen Graduate School (China)


Published in SPIE Proceedings Vol. 8684:
Design for Manufacturability through Design-Process Integration VII
Mark E. Mason; John L. Sturtevant, Editor(s)

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