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Proceedings Paper

High scan speed EBL containing contact hole resists with low defectivity
Author(s): Tsung Ju Yeh; Lian Cong Liu; Yeh-Sheng Lin; Wei-Sheng Chen; Che-Yi Lin; Chia Hung Lin; Chun Chi Yu; Deyan Wang; Mingqi Li; Chunfeng Guo; Rick Hardy; Tom Estelle; Chengbai Xu; George Barclay; Peter Trefonas; Kathleen O'Connell
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Paper Abstract

In the previous paper we discussed the relationship between blob defect count and the receding angle of a resist surface after development with an alkaline developer solution. This paper summarizes additional test results from our continued efforts in developing next generation embedded barrier layer (EBL) materials that render a resist film with even higher receding angle to further facilitate high speed and high acceleration scanning. How to reach a higher receding angle without sacrificing a low post development receding angle is also discussed in this paper. The ability for an EBL material to switch from a high receding angle to a receding angle of lower than 20° upon development is considered a very important attribute of an EBL, which is the key to reduce blob defect count by ensuring good dynamic wetting of a resist surface to DI water during a post development rinsing step. Resist formulations with different receding angles were studied for lithography performance and defectivity under different process conditions with varying wet processes. Both good lithography performance and low defectivity were obtained for contact hole resists including those with a surface receding angle of 78°.

Paper Details

Date Published: 29 March 2013
PDF: 8 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821X (29 March 2013); doi: 10.1117/12.2011537
Show Author Affiliations
Tsung Ju Yeh, United Microelectronics Corp. (Taiwan)
Lian Cong Liu, United Microelectronics Corp. (Taiwan)
Yeh-Sheng Lin, United Microelectronics Corp. (Taiwan)
Wei-Sheng Chen, United Microelectronics Corp. (Taiwan)
Che-Yi Lin, United Microelectronics Corp. (Taiwan)
Chia Hung Lin, United Microelectronics Corp. (Taiwan)
Chun Chi Yu, United Microelectronics Corp. (Taiwan)
Deyan Wang, The Dow Chemical Co. (United States)
Mingqi Li, The Dow Chemical Co. (United States)
Chunfeng Guo, The Dow Chemical Co. (United States)
Rick Hardy, The Dow Chemical Co. (United States)
Tom Estelle, The Dow Chemical Co. (United States)
Chengbai Xu, The Dow Chemical Co. (United States)
George Barclay, The Dow Chemical Co. (United States)
Peter Trefonas, The Dow Chemical Co. (United States)
Kathleen O'Connell, The Dow Chemical Co. (United States)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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