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Proceedings Paper

Development of KrF hybrid resist for a dual-isolation application
Author(s): Sen Liu; Steven Holmes; Kuang Jung Chen; Wu-song Huang; Ranee Kwong; Greg Breyta; Bruce Doris; Kangguo Cheng; Scott Luning; Maud Vinet; Laurent Grenouillet; Qing Liu; Matt Colburn; Chung-Hsi Wu
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Paper Abstract

As an option to traditional positive or negative photoresist, hybrid resist has been developed to provide an alternative way to create small trench features, at the range of 20-60 nm, by generating with a single expose, with both positive and negative responses to TMAH developer in one resist layer. [1] Here we report the design and development of a series of frequency-doubling KrF hybrid resists for an Extremely Thin Silicon on Insulator (ETSOI) dual-isolation application for 20 nm node and beyond. The resist formulations were optimized in terms of photo-acid generators (PAGs), PAG loading level and polymers. The resulting KrF hybrid resists are compatible with conventional KrF lithography processes, including conventional illumination, binary masks and 0.26 N TMAH developer, to afford a spacewidth of 20-60 nm. The space CD can be controlled by means of formulation and process options, but is insensitive to expose dose and mask CD. On integrated wafers, the hybrid resists have demonstrated good lithography performance, including through-pitch CD uniformity, focus/expose process window, profile, LER and RIE behavior. This hybrid resist process has been used to fabricate initial development structures for high performance dual-isolation ETSOI devices.

Paper Details

Date Published: 16 April 2013
PDF: 10 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820T (16 April 2013); doi: 10.1117/12.2011515
Show Author Affiliations
Sen Liu, IBM Microelectronics Div. (United States)
Steven Holmes, IBM Albany Nanotech (United States)
Kuang Jung Chen, IBM Microelectronics Div. (United States)
Wu-song Huang, IBM Microelectronics Div. (United States)
Ranee Kwong, IBM Microelectronics Div. (United States)
Greg Breyta, IBM Almaden Research Ctr. (United States)
Bruce Doris, IBM Albany Nanotech (United States)
Kangguo Cheng, IBM Almaden Research Ctr. (United States)
Scott Luning, GLOBALFOUNDRIES Inc. (United States)
Maud Vinet, CEA LETI-MINATEC (France)
Laurent Grenouillet, CEA LETI-MINATEC (France)
Qing Liu, ST Microelectronics (United States)
Matt Colburn, IBM Albany Nanotech (United States)
Chung-Hsi Wu, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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