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Proceedings Paper

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.
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Paper Abstract

The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.

Paper Details

Date Published: 12 April 2013
PDF: 8 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86830P (12 April 2013); doi: 10.1117/12.2011507
Show Author Affiliations
Jos Benschop, ASML Netherlands B.V. (Netherlands)
Andre Engelen, ASML Netherlands B.V. (Netherlands)
Hugo Cramer, ASML Netherlands B.V. (Netherlands)
Michael Kubis, ASML Netherlands B.V. (Netherlands)
Paul Hinnen, ASML Netherlands B.V. (Netherlands)
Hans van der Laan, ASML Netherlands B.V. (Netherlands)
Kaustuve Bhattacharyya, ASML Netherlands B.V. (Netherlands)
Jan Mulkens, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

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