Share Email Print
cover

Proceedings Paper

Line edge roughness (LER) mitigation studies specific to interference-like lithography
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Line edge roughness (LER) is a common problem to most lithography approaches and is seen as the main resolution limiter for advanced technology nodes1. There are several contributors to LER such as chemical/optical shot noise, random nature of acid diffusion, development process, and concentration of acid generator/base quencher. Since interference-like lithography (IL) is used to define one directional gridded patterns, some LER mitigation approaches specific to IL-like imaging can be explored. Two methods investigated in this work for this goal are (i) translational image averaging along the line direction and (ii) pupil plane filtering. Experiments regarding the former were performed on both interferometric and projection lithography systems. Projection lithography experiments showed a small amount of reduction in low/mid frequency LER value for image averaged cases at pitch of 150 nm (193 nm illumination, 0.93 NA) with less change for smaller pitches. Aerial image smearing did not significantly increase LER since it was directional. Simulation showed less than 1% reduction in NILS (compared to a static, smooth mask equivalent) with ideal alignment. In addition, description of pupil plane filtering on the transfer of mask roughness is given. When astigmatism-like aberrations were introduced in the pupil, transfer of mask roughness is decreased at best focus. It is important to exclude main diffraction orders from the filtering to prevent contrast and NILS loss. These ideas can be valuable as projection lithography approaches to conditions similar to IL (e.g. strong RET methods).

Paper Details

Date Published: 12 April 2013
PDF: 12 pages
Proc. SPIE 8683, Optical Microlithography XXVI, 86831Y (12 April 2013); doi: 10.1117/12.2011505
Show Author Affiliations
Burak Baylav, Rochester Institute of Technology (United States)
Andrew Estroff, Rochester Institute of Technology (United States)
Peng Xie, Applied Materials, Inc. (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 8683:
Optical Microlithography XXVI
Will Conley, Editor(s)

© SPIE. Terms of Use
Back to Top