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Proceedings Paper

Evaluating spin-on carbon materials at low temperatures for high wiggling resistance
Author(s): Michael Weigand; Vandana Krishnamurthy; Yubao Wang; Qin Lin; Douglas Guerrero; Sean Simmons; Brandy Carr
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Paper Abstract

Spin-on carbon (SOC) materials play an important role in the multilayer lithography scheme for the mass production of advanced semiconductor devices. One of the SOC’s key roles in the multilayer process (photoresist, silicon-containing hardmask, SOC) is the reactive ion etch (RIE) for pattern transfer into the substrate. As aspect ratios of the SOC material increase and feature sizes decrease, the pattern transfer from SOC to substrate by a fluorine-containing RIE induces severe pattern deformation (“wiggling”), which ultimately prevents successful pattern transfer into the substrate. One process that reduces line wiggling is a high-temperature (>250°C) post-application bake of the SOC material. In this study, we developed a process for evaluating SOC materials with respect to their pattern transfer performance. This process allowed us to evaluate line-wiggling behavior with several SOC materials at lower bake temperatures. This paper will discuss novel materials design in relation to high-aspect-ratio SOC layers and wiggling resistance.

Paper Details

Date Published: 29 March 2013
PDF: 9 pages
Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850R (29 March 2013); doi: 10.1117/12.2011466
Show Author Affiliations
Michael Weigand, Brewer Science, Inc. (United States)
Vandana Krishnamurthy, Brewer Science, Inc. (United States)
Yubao Wang, Brewer Science, Inc. (United States)
Qin Lin, Brewer Science, Inc. (United States)
Douglas Guerrero, Brewer Science, Inc. (United States)
Sean Simmons, Brewer Science, Inc. (United States)
Brandy Carr, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 8685:
Advanced Etch Technology for Nanopatterning II
Ying Zhang; Gottlieb S. Oehrlein; Qinghuang Lin, Editor(s)

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