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Proceedings Paper

Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
Author(s): Jens Timo Neumann; Paul Gräupner; Winfried Kaiser; Reiner Garreis; Bernd Geh
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Paper Abstract

With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that there is a trade-off between image quality and reticle efficiency. We show that these mask effects for high NA can be solved by employing a reduction ratio <4X, and show several options for a high-NA optics. Carefully discussing the feasibility of these options is an important part of defining a high-NA EUV tool.

Paper Details

Date Published: 1 April 2013
PDF: 13 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867915 (1 April 2013); doi: 10.1117/12.2011455
Show Author Affiliations
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Paul Gräupner, Carl Zeiss SMT GmbH (Germany)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)
Reiner Garreis, Carl Zeiss SMT GmbH (Germany)
Bernd Geh, Carl Zeiss SMT (United States)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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