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Proceedings Paper

Modeling strategies for EUV mask multilayer defect dispositioning and repair
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Paper Abstract

The paper describes a modeling approach, which enables systematic printing and compensation repair studies for multilayer defects on EUV-masks. The procedure combines an approximative model for the pre-optimization of required repair shapes with an accurate and efficient, fully rigorous modeling of the final repair shape. The obtained simulations results demonstrate the capabilities of compensation repair to reduce the impact of defects and confirm the eligibility of this technique as a valuable and important ingredient of a defect mitigation strategy for EUV masks.

Paper Details

Date Published: 1 April 2013
PDF: 12 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790Y (1 April 2013); doi: 10.1117/12.2011444
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Tristan Bret, Carl Zeiss SMS GmbH (Germany)
Rik Jonckheere, IMEC (Belgium)

Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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