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Proceedings Paper

Modeling studies on alternative EUV mask concepts for higher NA
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Paper Abstract

This paper investigates the performance of different mask options for sub-13 nm EUV-lithography with a 4x demagnification and an NA of 0.45. The considered mask options include standard binary masks, standard attenuated phase-shift masks, etched attenuated phase-shift masks and embedded-shifter phase-shift masks. The lithographic performance of these masks is investigated and optimized in terms of mask efficiency, NILS, DoF, OPC-performance and telecentricity errors. A multiobjective optimization technique is used to identify the most promising mask geometry parameters.

Paper Details

Date Published: 1 April 2013
PDF: 12 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791Q (1 April 2013); doi: 10.1117/12.2011432
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Tim Fühner, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Jens Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Johannes Ruoff, Carl Zeiss SMT GmbH (Germany)
Paul Gräupner, Carl Zeiss SMT GmbH (Germany)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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