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Process requirement of self-aligned multiple patterning
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Paper Abstract

EUV lithography is one of the most promising techniques for the advanced patterning, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 based self-aligned multiple patterning, because SAMP(SADP to SAQP) easily enables fine periodical patterning. As you know, current EUVL cannot satisfy enough resolution for sub 10nm hp critical patterning. We have already introduced innovative 193 based SADP/SAQP techniques and have demonstrated results in past SPIE sessions.[1][2][3][4] we will recommend the dry cleaning technique for the pattern collapse issue of 2nd core formation. On the other hand, we have to assume the possibility of EUV+SADP in order to interpolate the EUV resolution limit. In this paper, we will discuss about the requirement process factors of 193+SAQP and EUV+SADP.

Paper Details

Date Published: 29 March 2013
PDF: 8 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821F (29 March 2013); doi: 10.1117/12.2011398
Show Author Affiliations
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Masatoshi Yamato, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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