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Proceedings Paper

Process development of the EUVL negative-tone imaging at EIDEC
Author(s): Toshiya Takahashi; Ryuji Onishi; Toshiro Itani
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Paper Abstract

Underlayer and resist materials were investigated for negative-tone development (NTD) using extreme ultraviolet (EUV) lithography. NTD-compatible underlayers reduced the pattern collapse observed in preliminary NTD evaluations. An NTD resist with higher activation energy (Ea) deprotecting groups or higher glass transition temperature (Tg) polymer improved the resolution and line width roughness (LWR). The improvements provided by the combination of underlayer and resist materials with respect to NTD, ultimate resolution, and trench patterning were evaluated. In addition, we studied the dissolution characteristics by comparing negative-tone and positive-tone resists to achieve a fundamental understanding of their characteristics.

Paper Details

Date Published: 29 March 2013
PDF: 8 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820M (29 March 2013); doi: 10.1117/12.2011356
Show Author Affiliations
Toshiya Takahashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Ryuji Onishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Toshiro Itani, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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