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Proceedings Paper

Photoelectric performance degradation of millisecond laser-irradiated silicon photodiodes
Author(s): Zewen Li; Chen Chen; Xi Wang; Yiming Zhang; Hongchao Zhang; Zhonghua Shen; Xiaowu Ni
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Paper Abstract

The photoelectric parameters degradation of Si-based PIN photodiodes irradiated by 1064 nm millisecond Nd:YAG laser has been measured. The samples were the commercial silicon PIN photodiodes BPW34 with plastic package. The applied laser fluence levels range from 20J/cm2 to 1400J/cm2. Surface damage morphology, dark current and sensitivity were investigated for the irradiated photodiodes. It has been shown that the dark current was the first and the most sensitive degradation parameter, and we believe that the dislocation introduced by the tangential component of thermal stress in the [111] and [110] direction was the main reason. The sensitivity decrease until the dark current reach to μA magnitude and the surface have melted seriously, the finite element method was used to calculation the dopant redistribution process. It shows that the degradation of sensitivity depends greatly on the process under various applied laser fluencies.

Paper Details

Date Published: 16 May 2013
PDF: 9 pages
Proc. SPIE 8796, 2nd International Symposium on Laser Interaction with Matter (LIMIS 2012), 87960R (16 May 2013); doi: 10.1117/12.2011267
Show Author Affiliations
Zewen Li, Nanjing Univ. of Science and Technology (China)
Chen Chen, Nanjing Univ. of Science and Technology (China)
Xi Wang, Nanjing Univ. of Science and Technology (China)
Yiming Zhang, Nanjing Univ. of Science and Technology (China)
Hongchao Zhang, Nanjing Univ. of Science and Technology (China)
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8796:
2nd International Symposium on Laser Interaction with Matter (LIMIS 2012)
Stefan Kaierle; Jingru Liu; Jianlin Cao, Editor(s)

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