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Proceedings Paper

Novel EUV resist materials and process for 20nm half pitch and beyond
Author(s): Ken Maruyama; Ramakrishnan Ayothi; Yoshi Hishiro; Koji Inukai; Motohiro Shiratani; Tooru Kimura
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Paper Abstract

New resist, under layer, and topcoat materials specific to EUVL was developed and investigated for sub 20 nm hp patterning performance. High Tg resin and high absorption resin were developed and incorporated in to EUV resist. EUV resist including high Tg resin showed good LWR and local CD uniformity (LCDU). EUV resist containing high absorption resin showed higher resist sensitivity. New silicon type under-layer materials with different hydrophobicity were developed for further patterning performance improvement. Silicon type under-layer material with higher hydrophobic surface property improved line collapse margin which in turn improved resist resolution. EUV top-coat material was developed and examined for EUV resist sensitivity to out of band (OOB) radiation. EUV top-coat suppressed OOB influence and improved lithographic performance. EUV resist containing new materials resolved 15 nm half pitch lines and spaces and 20 nm contact hole patterns.

Paper Details

Date Published: 29 March 2013
PDF: 8 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820B (29 March 2013); doi: 10.1117/12.2011243
Show Author Affiliations
Ken Maruyama, JSR Micro, Inc. (United States)
Ramakrishnan Ayothi, JSR Micro, Inc. (United States)
Yoshi Hishiro, JSR Micro, Inc. (United States)
Koji Inukai, JSR Corp. (Japan)
Motohiro Shiratani, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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