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Proceedings Paper

New spin-on metal hardmask materials for lithography processes
Author(s): Huirong Yao; Salem Mullen; Elizabeth Wolfer; Dalil Rahman; Clement Anyadiegwu; Douglas Mckenzie; Alberto Dioses; Joonyeon Cho; Munirathna Padmanaban
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Paper Abstract

Since the critical dimensions in integrated circuit (IC) device fabrication continue to shrink below 32 nm, multilayer stacks with alternating etch selectivities are required for successful pattern transfer from the exposed photoresist to the substrate. Inorganic resist underlayer materials are used as hard masks in reactive ion etching (RIE) with oxidative gases. The conventional silicon hardmask has demonstrated good reflectivity control and reasonable etch selectivity. However, some issues such as the rework of trilayer stacks and cleaning of oxide residue by wet chemistry are challenging problems for manufacturability. The present work reveals novel spin-on underlayer materials containing significant amounts of metal oxides in the film after baking at normal processing conditions. Such an inorganic metal hardmask (MHM) has excellent etch selectivity in plasma etch processes of the trilayer stack. The composition has good long term shelf life and pot life stability based on solution LPC analysis and wafer defect studies, respectively. The material absorbs DUV wavelengths and can be used as a spin-on inorganic or hybrid antireflective coating to control substrate reflectivity under DUV exposure of photoresist. Some of these metal-containing materials can be used as an underlayer in EUV lithography to significantly enhance photospeed. Specific metal hard masks are also developed for via or trench filling applications in IRT processes. The materials have shown good coating and lithography performance with a film thicknesses as low as 10 nm under ArF dry or immersion conditions. In addition, the metal oxide films or residues can be partially or completely removed by using various wet-etching solutions at ambient temperature.

Paper Details

Date Published: 29 March 2013
PDF: 10 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820S (29 March 2013); doi: 10.1117/12.2011226
Show Author Affiliations
Huirong Yao, AZ Electronic Materials USA Corp. (United States)
Salem Mullen, AZ Electronic Materials USA Corp. (United States)
Elizabeth Wolfer, AZ Electronic Materials USA Corp. (United States)
Dalil Rahman, AZ Electronic Materials USA Corp. (United States)
Clement Anyadiegwu, AZ Electronic Materials USA Corp. (United States)
Douglas Mckenzie, AZ Electronic Materials USA Corp. (United States)
Alberto Dioses, AZ Electronic Materials USA Corp. (United States)
Joonyeon Cho, AZ Electronic Materials USA Corp. (United States)
Munirathna Padmanaban, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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