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Proceedings Paper

22 nm node wafer inspection using diffraction phase microscopy and image post-processing
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Paper Abstract

We applied epi-illumination diffraction phase microscopy to measure the amplitude and phase of the scattered field from a SEMATECH 22 nm node intentional defect array (IDA) wafer. We used several imaging processing techniques to remove the wafer’s underlying structure and reduce both the spatial and temporal noise and eliminate the system calibration error to produce stretched panoramic amplitude and phase images. From the stretched images, we detected defects down to 20 nm × 160 nm for a parallel bridge, 20 nm × 100 nm for perpendicular bridge, and 35 nm × 70 nm for an isolated dot.

Paper Details

Date Published: 10 April 2013
PDF: 7 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810G (10 April 2013); doi: 10.1117/12.2011216
Show Author Affiliations
Renjie Zhou, Univ. of Illinois at Urbana-Champaign (United States)
Gabriel Popescu, Univ. of Illinois at Urbana-Champaign (United States)
Lynford L. Goddard, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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