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Electrical conductivity of the LiNbO3 heterostructures grown by ion sputtering method
Author(s): V. Ievlev; M. Sumets; A. Kostuchenko
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Paper Abstract

The polycrystalline LiNbO3 films were grown by the ion-beam sputtering method on (001)Si substrates. Dielectric losses of the grown (001)Si-LiNbO3 arises from conductivity of LiNbO3 films and increases when temperature rises. Ac conductivity of the studied heterostructures is described by the correlated-barrier hopping (CBH) model and it is induced by the jumps of charge carries between charge centers with concentration D = 3,5·1022 m-3.

Paper Details

Date Published: 15 March 2013
PDF: 6 pages
Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87701M (15 March 2013); doi: 10.1117/12.2011201
Show Author Affiliations
V. Ievlev, Voronezh State Univ. (Russian Federation)
M. Sumets, Voronezh State Univ. (Russian Federation)
A. Kostuchenko, Voronezh State Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 8770:
17th International School on Quantum Electronics: Laser Physics and Applications
Tanja N. Dreischuh; Albena T. Daskalova, Editor(s)

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