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Proceedings Paper

Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
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Paper Abstract

In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopic Muller matrix elements measurements were performed at various azimuthal angles for OCD, and X-ray diffraction intensities were collected for different incident angles in CD-SAXS measurements. A common trapezoidal model was used to compute the OCD and CD-SAXS signatures, using rigorous coupled wave (RCW) analysis and a 2D Fourier transform, respectively. Profile parameters, some material parameters, and instruments parameters were adjusted by a non-linear fitting procedure of the data. Results from both measurement techniques were compared and found in reasonable agreement with one another, although some of the parameters have differences that exceed the estimated uncertainties.

Paper Details

Date Published: 10 April 2013
PDF: 8 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86810Q (10 April 2013); doi: 10.1117/12.2011144
Show Author Affiliations
P. Lemaillet, Univ. of Maryland (United States)
National Institute of Standards and Technology (United States)
T. A. Germer, National Institute of Standards and Technology (United States)
R. Joseph Kline, National Institute of Standards and Technology (United States)
Daniel F. Sunday, National Institute of Standards and Technology (United States)
Chengqing Wang, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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