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Proceedings Paper

Overlay improvement through lot-based feed-forward: applications to various 28nm node lithography operations
Author(s): B. Orlando; M. Gatefait; J. De-Caunes; P.J. Goirand
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Paper Abstract

We introduced a very simple overlay feed forward correction based on lot data issued from previous lithography operations. Simple method for correction factor optimization was also proposed. We applied this method in various cases based on 28nm node early production: implants lithography on 248nm tools, contact holes double patterning on 193nm immersion tool, and we also tried to improve contact holes patterning based on 248nm lithography data. All analysis were based on early production 28nm node data mixing 28LP and 28FDSOI technologies. We first optimized the correction based on our simple approach, and then compute the dispersion of all linear overlay parameters. Maximum modeled overlay error was also computed. In most cases we obtained significant improvements. The interest of such a very simple approach that requires reduced software development and allows simple implementation was thus demonstrated.

Paper Details

Date Published: 10 April 2013
PDF: 7 pages
Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868117 (10 April 2013); doi: 10.1117/12.2011117
Show Author Affiliations
B. Orlando, STMicroelectronics (France)
M. Gatefait, STMicroelectronics (France)
J. De-Caunes, STMicroelectronics (France)
P.J. Goirand, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 8681:
Metrology, Inspection, and Process Control for Microlithography XXVII
Alexander Starikov; Jason P. Cain, Editor(s)

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