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Proceedings Paper

Study on EUV mask defect inspection with hp 16nm node using simulated projection electron microscope images
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Paper Abstract

According to an ITRS2012-Update the sensitivity requirement for EUV mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16 nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64 line-and-space patterned EUV mask was investigated using simulated projection electron microscope (PEM) image. The obtained defect images showed optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects with 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that PEM technique has a potential to detect 16 nm size defects on hp 64 nm patterned EUV mask.

Paper Details

Date Published: 1 April 2013
PDF: 9 pages
Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791V (1 April 2013); doi: 10.1117/12.2011109
Show Author Affiliations
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)


Published in SPIE Proceedings Vol. 8679:
Extreme Ultraviolet (EUV) Lithography IV
Patrick P. Naulleau, Editor(s)

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