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Proceedings Paper

Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes
Author(s): Keisuke Kato; Atsushi Yasuda; Shin-ichi Maeda; Takuji Uesugi; Takeru Okada; Akira Wada; Seiji Samukawa
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Paper Abstract

The serious problem associated with 193-nm lithography using an ArF photoresist is roughness formation of photoresist polymer during plasma processes. We have previously investigated the mechanism of roughness formation caused by plasma. The main deciding factor for roughness formation is a chemical reaction between photoresist polymer and reactive species from plasma. The lactone group in photoresist polymer is highly chemically reactive, and shrinking the lactone structure enhances the roughness formation. In this paper, on the basis of the mechanism of roughness formation, we propose a novel ArF photoresist polymer. The roughness formation was much more suppressed in the novel photoresist polymer during plasma etching process than in the previous type. In the novel photoresist polymer, chemical reactions were spread evenly on the photoresist film surface by adding the polar structure. As a result, decreases in the lactone group were inhibited, leading to suppressing ArF photoresist roughness.

Paper Details

Date Published: 29 March 2013
PDF: 10 pages
Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821R (29 March 2013); doi: 10.1117/12.2011096
Show Author Affiliations
Keisuke Kato, Mitsubishi Rayon Co., Ltd. (Japan)
Atsushi Yasuda, Mitsubishi Rayon Co., Ltd. (Japan)
Shin-ichi Maeda, Mitsubishi Rayon Co., Ltd. (Japan)
Takuji Uesugi, Tohoku Univ. (Japan)
Takeru Okada, Tohoku Univ. (Japan)
Akira Wada, Tohoku Univ. (Japan)
Seiji Samukawa, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 8682:
Advances in Resist Materials and Processing Technology XXX
Mark H. Somervell, Editor(s)

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